| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 2 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 3 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 4 |
1N4447 |
Small Signal Diode |
Fairchild Semiconductor |
| 5 |
1N4447 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
| 6 |
1N4447 |
Silicon Epitaxial Planar Diodes |
Honey Technology |
| 7 |
1N4447 |
High speed switching diode |
IPRS Baneasa |
| 8 |
1N4447 |
Silicon switching diode |
IPRS Baneasa |
| 9 |
1N4447 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916A |
IPRS Baneasa |
| 10 |
1N4447 |
Switching Diode |
ITT Semiconductors |
| 11 |
1N4447 |
Signal or Computer Diode |
Microsemi |
| 12 |
1N4447 |
Silicon epitaxial planar diode |
Mikroelektronikai Vallalat |
| 13 |
1N4447 |
Signal Diode |
Motorola |
| 14 |
1N4447 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
| 15 |
1N4447 |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 16 |
1N4447 |
Silicon epitaxial planar type diode. |
Panasonic |
| 17 |
1N4447 |
SILICON EPITAXIAL PLANAR DIODE |
Semtech |
| 18 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 19 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 20 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 21 |
1N4447 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 22 |
1N4447-1 |
Signal or Computer Diode |
Microsemi |
| 23 |
1N4447-1E3 |
Signal or Computer Diode |
Microsemi |
| 24 |
1N4447A |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 25 |
2N4447 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 26 |
AO4447A |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 27 |
DLN4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 28 |
FDLL4447 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
| 29 |
HD14447B |
Analog to Digital Converter Linear Subsystem |
Hitachi Semiconductor |
| 30 |
J1N4447 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| | | |
