| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D44C2 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2 |
D44C2 |
POWER TRANSISTORS(4A,30-80V,30W) |
MOSPEC Semiconductor |
| 3 |
D44C2 |
NPN Power Transistor TO-220 |
National Semiconductor |
| 4 |
D44C2 |
NPN Power Transistor |
National Semiconductor |
| 5 |
D44C2 |
NPN Silicon Power Transistor 30W/4A |
National Semiconductor |
| 6 |
D44C2 |
Trans GP BJT NPN 30V 6A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 7 |
KM44C256B-10 |
100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 8 |
KM44C256B-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 9 |
KM44C256B-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 10 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 11 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 12 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 13 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 14 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 15 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 16 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 17 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 18 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 19 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 20 |
KM44C256D-7 |
60ns; V(cc/in/out): -1.0 to 7.0V; 358mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 21 |
KM44C256D-8 |
60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 22 |
MCM44C256B |
4MB R4000 Secondary Cache Fast Static RAM Module Set |
Motorola |
| 23 |
MCM44C256BSG12 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 24 |
MCM44C256BSG15 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 25 |
MCM44C256BSG17 |
4MB R4000 secondary cache fast static RAM module set |
Motorola |
| 26 |
SLE44C20S |
Security & Chip Card ICs |
Infineon |
| 27 |
SLE44C20S-C |
Security & Chip Card ICs |
Infineon |
| 28 |
SLE44C20S-M4 |
Security & Chip Card ICs |
Infineon |
| 29 |
SLE44C20S-S |
Security & Chip Card ICs |
Infineon |
| 30 |
SLE44C20S-T85-C |
Security & Chip Card ICs |
Infineon |
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