No. |
Part Name |
Description |
Manufacturer |
1 |
1430450 |
Bobbin Type Inductors |
C&D Technologies |
2 |
1504-450E |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
3 |
1504-450E |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
4 |
1504-450G |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
5 |
1504-450G |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
6 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
7 |
1519-450E |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
8 |
1519-450G |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
9 |
161X |
Unbased lamp. 3.5V, 0.450A. |
Gilway Technical Lamp |
10 |
16C450 |
UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER (UART) |
Exar |
11 |
1N4450 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
12 |
1N4450 |
High conductance ultra fast diode. Working inverse voltage 30 V. |
Fairchild Semiconductor |
13 |
1N4450 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
14 |
1N4450 |
Silicon Epitaxial Planar Diodes |
Honey Technology |
15 |
1N4450 |
Diode Switching 40V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
16 |
1N4450 |
SILICON EPITAXIAL PLANAR DIODE |
Semtech |
17 |
1N4450 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
18 |
1N450 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
19 |
1N4500 |
Signal or Computer Diode |
Microsemi |
20 |
1N4500 |
Diode Switching 75V 2-Pin DO-35 |
New Jersey Semiconductor |
21 |
1N4500-1 |
MILITARY SWITCHING DIODES |
Microsemi |
22 |
1N4506 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
23 |
1N4507 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
24 |
1N4508 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
25 |
1N4508 |
Diode Switching 600V 22A 2-Pin DO-4 |
New Jersey Semiconductor |
26 |
1N4508A |
Diode Switching 600V 22A 2-Pin DO-4 |
New Jersey Semiconductor |
27 |
1N4509 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
28 |
1N4509 |
Diode Switching 800V 22A 2-Pin DO-4 |
New Jersey Semiconductor |
29 |
1N5450 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
30 |
1N5450 |
Diode VAR Cap Single 30V 33pF 2-Pin DO-7 |
New Jersey Semiconductor |
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