| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N458A |
125 V, 500 mW low leakage diode |
BKC International Electronics |
| 2 |
1N458A |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| 3 |
1N458A |
Signal or Computer Diode |
Microsemi |
| 4 |
1N458A |
Silicon Signal Diode |
Motorola |
| 5 |
1N458A |
High Conductance Low Leakage Diode |
National Semiconductor |
| 6 |
1N458A |
Diode Small Signal Switching 150V 0.5A 2-Pin DO-35 Bulk |
New Jersey Semiconductor |
| 7 |
1N458A |
Low leakage silicon signal diode |
SESCOSEM |
| 8 |
1N458A |
Silicon General Purpose Diode |
Texas Instruments |
| 9 |
1N458A |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 10 |
1N458A-1 |
Diode Small Signal Switching 150V 0.5A 2-Pin DO-35 Bulk |
New Jersey Semiconductor |
| 11 |
1N458Ae3 |
Signal or Computer Diode |
Microsemi |
| 12 |
1N458AF |
Diode Small Signal Switching 150V 0.5A 2-Pin DO-35 Bulk |
New Jersey Semiconductor |
| 13 |
1N458ATR |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| 14 |
1N458A_T50R |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| 15 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 16 |
2N458A |
Germanium PNP Transistor |
Motorola |
| 17 |
2N458A |
BJT |
New Jersey Semiconductor |
| 18 |
2N458A |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 19 |
AD6458ARS |
GSM 3 V Receiver IF Subsystem |
Analog Devices |
| 20 |
CLL458A |
0.500W Mini-MELF Switching Diode , 150.0V Vr, 0.020uA Ir, 0.90V Vf @ 50mA If |
Continental Device India Limited |
| 21 |
CXD2458AR |
Timing Generator for Color LCD Panels |
SONY |
| 22 |
DC458A |
LTC4240 Evaluation Kit |
Linear Technology |
| 23 |
DG458AK/883 |
Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers |
Vishay |
| 24 |
DG458AZ/883 |
Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers |
Vishay |
| 25 |
FDLL458A |
Low leakage diode. Working inverse voltage 125V. |
Fairchild Semiconductor |
| 26 |
FDLL458A |
High Conductance Low Leakage Diode |
National Semiconductor |
| 27 |
KA1458A |
Dual operational amplifier |
Samsung Electronic |
| 28 |
KA1458AD |
Dual operational amplifier |
Samsung Electronic |
| 29 |
KA1458AI |
Dual operational amplifier |
Samsung Electronic |
| 30 |
KA1458AID |
Dual operational amplifier |
Samsung Electronic |
| | | |
