| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5474B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 2 |
1N5474B |
Diode VAR Cap Single 30V 68pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 3 |
2N6474B |
Trans GP BJT NPN 120V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 4 |
CY7C1474BV33-200BGXC |
72-Mbit (2 M � 36/4 M � 18/1 M � 72) Pipelined SRAM with NoBL� Architecture |
Cypress |
| 5 |
DM54S474BJ |
50 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 6 |
DM74S474BJ |
35 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 7 |
DM74S474BN |
35 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 8 |
DM74S474BV |
35 ns, (512 x 8) 4096-bit TTL PROM |
National Semiconductor |
| 9 |
DM77SR474BJ |
40 ns, (512 x 8) 4K-bit registered TTL PROM |
National Semiconductor |
| 10 |
DM87SR474BJ |
35 ns, (512 x 8) 4K-bit registered TTL PROM |
National Semiconductor |
| 11 |
DM87SR474BN |
35 ns, (512 x 8) 4K-bit registered TTL PROM |
National Semiconductor |
| 12 |
DM87SR474BV |
35 ns, (512 x 8) 4K-bit registered TTL PROM |
National Semiconductor |
| 13 |
KF474B |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 14 |
KF474BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 15 |
KF474BV |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 16 |
UPB100474B-10 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns. |
NEC |
| 17 |
UPB100474B-15 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns. |
NEC |
| 18 |
UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns. |
NEC |
| 19 |
UPB100474B-8 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 8 ns. |
NEC |
| | | |
