| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N479A |
Silicon NPN Transistor |
Motorola |
| 2 |
93479ADC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
| 3 |
93479ADMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
| 4 |
93479ALMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
| 5 |
EYLGMFW479A |
Aspherical Glass Lenses for Optical Communications |
Panasonic |
| 6 |
MAX1479ATE |
300MHz to 450MHz Low-Power, Crystal-Based +10dBm ASK/FSK Transmitter |
MAXIM - Dallas Semiconductor |
| 7 |
MAX1479ATE+ |
300MHz to 450MHz Low-Power, Crystal-Based +10dBm ASK/FSK Transmitter |
MAXIM - Dallas Semiconductor |
| 8 |
MAX1479ATE+C2R |
300MHz to 450MHz Low-Power, Crystal-Based +10dBm ASK/FSK Transmitter |
MAXIM - Dallas Semiconductor |
| 9 |
MAX1479ATE+T |
300MHz to 450MHz Low-Power, Crystal-Based +10dBm ASK/FSK Transmitter |
MAXIM - Dallas Semiconductor |
| 10 |
MAX479ACPD |
17��A Max, Dual/Quad, Single-Supply, Precision Op Amps |
MAXIM - Dallas Semiconductor |
| 11 |
MN6479A |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
| 12 |
NE552R479A-T1A |
NEC's 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET. |
NEC |
| 13 |
NE650R479A |
0.4 W L, S-BAND POWER GaAs MES FET |
NEC |
| 14 |
NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET |
NEC |
| 15 |
NE651R479A |
0.4 W L-BAND POWER GaAs HJ-FET |
NEC |
| 16 |
NE651R479A-T1 |
0.4 W L-BAND POWER GaAs HJ-FET |
NEC |
| 17 |
TDA7479AD |
SINGLE CHIP RDS DEMODULATOR + FILTER |
SGS Thomson Microelectronics |
| 18 |
TDA7479AD |
SINGLE CHIP RDS DEMODULATOR + FILTER |
ST Microelectronics |
| 19 |
TDA7479ADTR |
SINGLE CHIP RDS DEMODULATOR + FILTER |
ST Microelectronics |
| 20 |
V23105A5479A201 |
The Best Relaytion |
Tyco Electronics |
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