| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DMG4800LFG |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 2 |
DMG4800LFG-7 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 3 |
DMG4800LK3 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 4 |
DMG4800LK3-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 5 |
DMG4800LSD |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 6 |
DMG4800LSD-13 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 7 |
DMN4800LSS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 8 |
DMN4800LSS-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 9 |
DMN4800LSSL |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 10 |
DMN4800LSSL-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 11 |
HM514800LJP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 12 |
HM514800LJP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 13 |
HM514800LJP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 14 |
HM514800LRR-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 15 |
HM514800LRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 16 |
HM514800LRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 17 |
HM514800LTT-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 18 |
HM514800LTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 19 |
HM514800LTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 20 |
HM514800LZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 21 |
HM514800LZP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 22 |
HM514800LZP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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