No. |
Part Name |
Description |
Manufacturer |
1 |
48L120D |
STANDARD RECOVERY DIODES |
International Rectifier |
2 |
48L160D |
STANDARD RECOVERY DIODES |
International Rectifier |
3 |
IRF7748L1 |
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
4 |
IRF7748L1TRPBF |
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
5 |
KM48L16031BT |
128Mb DDR SDRAM |
Samsung Electronic |
6 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
7 |
KM48L16031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
8 |
KM48L16031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
9 |
KM48L16031BT-G(F)0 |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
10 |
KM48L16031BT-G(F)Y |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
11 |
KM48L16031BT-G(F)Z |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
12 |
KM48L16031BT-G(L)0 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
13 |
KM48L16031BT-G(L)Y |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
14 |
KM48L16031BT-G(L)Z |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
15 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
16 |
KM48L16031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
17 |
KM48L16031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
18 |
LG-248L1 |
Photointerrupters(Transmissive) |
Kodenshi Corp |
19 |
LG-248L1 |
Photointerrupters(Transmissive) |
Kondenshi Corp |
20 |
MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
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