| No. |
Part Name |
Description |
Manufacturer |
| 1 |
LM8364BALMF20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 2 |
LM8364BALMF20 |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 3 |
LM8364BALMF20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 4 |
LM8364BALMF30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 5 |
LM8364BALMF45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 6 |
LM8364BALMFX20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 7 |
LM8364BALMFX20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 8 |
LM8364BALMFX30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 9 |
LM8364BALMFX45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 10 |
MH8S64BALD-10 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 11 |
MH8S64BALD-6 |
536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 12 |
MH8S64BALD-7 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 13 |
MH8S64BALD-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| | | |
