| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD7864BS-1 |
4-Channel, Simultaneous Sampling, High Speed, 12-Bit ADC |
Analog Devices |
| 2 |
ADSP-2164BS-40 |
ADSP-2100 Family DSP Microcomputers |
Analog Devices |
| 3 |
CQ202-4BS-2 |
Leaded Thyristor TRIAC |
Central Semiconductor |
| 4 |
KM416V4004BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 5 |
KM416V4004BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 6 |
KM416V4004BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 7 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 8 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 9 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 10 |
KM48C8004BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 11 |
KM48C8004BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 12 |
KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 13 |
KM48C8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 14 |
KM48C8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 15 |
KM48C8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 16 |
KM48V8004BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 17 |
KM48V8004BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 18 |
KM48V8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 19 |
KM48V8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 20 |
KM48V8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 21 |
KM48V8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 22 |
LC3564BS-10 |
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins |
SANYO |
| 23 |
LC3564BS-70 |
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins |
SANYO |
| 24 |
MMBZ5234BS-7-F |
Zener Diodes |
Diodes |
| 25 |
MMBZ5254BS-7-F |
Zener Diodes |
Diodes |
| 26 |
MMSZ5234BS-7-F |
Zener Diodes |
Diodes |
| 27 |
MMSZ5254BS-7-F |
Zener Diodes |
Diodes |
| 28 |
U6024BS-FP |
6-GHz Frequency Divider |
TEMIC |
| 29 |
UT62L1024BS-55LI |
Access time: 55 ns, 128 K x 8 Bit low power CMOS SRAM |
UTRON Technology |
| 30 |
UT62L1024BS-55LLI |
Access time: 55 ns, 128 K x 8 Bit low power CMOS SRAM |
UTRON Technology |
| | | |
