| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AT24C256C1-10CC |
2-Wire Serial EEPROMs |
Atmel |
| 2 |
AT24C256C1-10CC-1.8 |
2-Wire Serial EEPROMs |
Atmel |
| 3 |
AT24C256C1-10CC-2.7 |
2-Wire Serial EEPROMs |
Atmel |
| 4 |
AT24C256C1-10CI |
2-Wire Serial EEPROMs |
Atmel |
| 5 |
AT24C256C1-10CI-1.8 |
2-Wire Serial EEPROMs |
Atmel |
| 6 |
AT24C256C1-10CI-2.7 |
2-Wire Serial EEPROMs |
Atmel |
| 7 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 8 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 9 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 10 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 11 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 12 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 13 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 14 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 15 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 16 |
TU24C256CP3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 17 |
TU24C256CS3 |
CMOS IIC 2-wire bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| | | |
