| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AM30LV0064DJ40 |
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
Advanced Micro Devices |
| 2 |
AM30LV0064DJ40E2IT |
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
Advanced Micro Devices |
| 3 |
AM30LV0064DJ40F2IT |
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
Advanced Micro Devices |
| 4 |
AM30LV0064DJ40WGIT |
64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
Advanced Micro Devices |
| 5 |
DG444DJ |
Monolithic / Quad SPST / CMOS Analog Switches |
Intersil |
| 6 |
DG444DJ |
Improved / Quad / SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 7 |
DG444DJ+ |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 8 |
DST3904DJ |
40V DUAL NPN SURFACE MOUNT TRANSISTOR |
Diodes |
| 9 |
DST3904DJ-7 |
40V DUAL NPN SURFACE MOUNT TRANSISTOR |
Diodes |
| 10 |
IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications |
International Rectifier |
| 11 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 12 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 13 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 14 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 15 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 16 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 17 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 18 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 19 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 20 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 21 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 22 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 23 |
LT1014DJ |
QUAD PRECISION OPERATIONAL AMPLIFIERS |
Texas Instruments |
| 24 |
MT4LC8M8P4DJ-5 |
DRAM |
Micron Technology |
| 25 |
MT4LC8M8P4DJ-6 |
DRAM |
Micron Technology |
| 26 |
OP14DJ |
DUAL MATCHED HIGH PERFORMANCE OPERATIONAL AMPLIFIERS |
Analog Devices |
| 27 |
OP14DJ |
Dual Matched high-performance operational amplifier |
Precision Monolithics |
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