No. |
Part Name |
Description |
Manufacturer |
1 |
CAT24WC04J-1.8TE13F |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
2 |
CAT28LV64J-15T |
64K-Bit CMOS PARALLEL EEPROM |
Catalyst Semiconductor |
3 |
GS74104J-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
4 |
GS74104J-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
5 |
GS74104J-12 |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
6 |
GS74104J-12I |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
7 |
GS74104J-15 |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
8 |
GS74104J-15I |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
9 |
HS9474J-1 |
37kHz sampling, +/-5V input, 11-bit A/D complete converter with reference, clock and three state output |
Sipex Corporation |
10 |
M5M54R04J-12 |
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
11 |
M5M54R04J-15 |
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
12 |
M5M5V4R04J-12 |
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
13 |
M5M5V4R04J-15 |
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
14 |
PA7024J-15 |
Programmable Electrically Erasable Logic Array |
etc |
15 |
PA7024J-15 |
15ns programmable electrically erasable logic array |
ICT |
16 |
TC55V1664J-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
17 |
TC55V1664J-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
18 |
TC55V1864J-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
19 |
X20C04J-15 |
Nonvolatile Static RAM |
Xicor |
20 |
X28C64J-15 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
21 |
X28HC64J-12 |
5 Volt/ Byte Alterable E2PROM |
Xicor |
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