No. |
Part Name |
Description |
Manufacturer |
1 |
1/4M25Z |
Zener Diode 1/4W 25V |
Motorola |
2 |
1206Z104M250NXTM |
CERAMIC MULTILAYER CAPACITORS |
NOVACAP |
3 |
AMC1304M25 |
Reinforced Isolated Modulator with LDO Regulator, ?250mV Input, and CMOS Interface 16-SOIC -40 to 125 |
Texas Instruments |
4 |
AMC1304M25DW |
Reinforced Isolated Modulator with LDO Regulator, ?250mV Input, and CMOS Interface 16-SOIC -40 to 125 |
Texas Instruments |
5 |
AMC1304M25DWR |
Reinforced Isolated Modulator with LDO Regulator, ?250mV Input, and CMOS Interface 16-SOIC -40 to 125 |
Texas Instruments |
6 |
FAR-M3DC-74M250-E100 |
Piezoelectric VCO (6 to 30 MHz) |
Fujitsu Microelectronics |
7 |
OR2C06A-4M256 |
Field-Programmable Gate Arrays |
etc |
8 |
OR2C06A-4M256I |
Field-Programmable Gate Arrays |
etc |
9 |
OR2C08A-4M256 |
Field-Programmable Gate Arrays |
etc |
10 |
OR2C08A-4M256I |
Field-Programmable Gate Arrays |
etc |
11 |
OR2C10A-4M256 |
Field-Programmable Gate Arrays |
etc |
12 |
OR2C10A-4M256I |
Field-Programmable Gate Arrays |
etc |
13 |
OR2C12A-4M256 |
Field-Programmable Gate Arrays |
etc |
14 |
OR2C12A-4M256I |
Field-Programmable Gate Arrays |
etc |
15 |
OR2C15A-4M256 |
Field-Programmable Gate Arrays |
etc |
16 |
OR2C15A-4M256I |
Field-Programmable Gate Arrays |
etc |
17 |
OR2T06A-4M256 |
Field-Programmable Gate Arrays |
etc |
18 |
OR2T06A-4M256I |
Field-Programmable Gate Arrays |
etc |
19 |
OR2T08A-4M256 |
Field-Programmable Gate Arrays |
etc |
20 |
OR2T08A-4M256I |
Field-Programmable Gate Arrays |
etc |
21 |
OR2T10A-4M256 |
Field-Programmable Gate Arrays |
etc |
22 |
OR2T10A-4M256I |
Field-Programmable Gate Arrays |
etc |
23 |
OR2T12A-4M256 |
Field-Programmable Gate Arrays |
etc |
24 |
OR2T12A-4M256I |
Field-Programmable Gate Arrays |
etc |
25 |
OR2T15A-4M256 |
Field-Programmable Gate Arrays |
etc |
26 |
OR2T15A-4M256I |
Field-Programmable Gate Arrays |
etc |
27 |
T14M256A |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
28 |
T14M256A-8J |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
29 |
T14M256A-8J |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
30 |
T14M256A-8P |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
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