No. |
Part Name |
Description |
Manufacturer |
1 |
1505-100B |
Delay 100 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
2 |
BUK455-100B |
PowerMOS transistor |
Philips |
3 |
BUK475-100B |
PowerMOS transistor Isolated version of BUK455-100A/B |
Philips |
4 |
BUK545-100B |
PowerMOS transistor Logic level FET |
Philips |
5 |
BUK555-100B |
PowerMOS transistor Logic level FET |
Philips |
6 |
CY7C1302DV25-100BZXC |
9-Mbit Burst of Two Pipelined SRAMs with QDR(TM) Architecture |
Cypress |
7 |
CY7C1303BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture |
Cypress |
8 |
CY7C1304DV25-100BZXC |
9-Mbit Burst of 4 Pipelined SRAM with QDR(TM) Architecture |
Cypress |
9 |
CY7C1305BV25-100BZC |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture |
Cypress |
10 |
CY7C1305BV25-100BZXC |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture |
Cypress |
11 |
CY7C1306AV25-100BZC |
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture |
Cypress |
12 |
CY7C1306BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture |
Cypress |
13 |
CY7C1307AV25-100BZC |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture |
Cypress |
14 |
CY7C1307BV25-100BZC |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture |
Cypress |
15 |
CY7C1307BV25-100BZXC |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture |
Cypress |
16 |
CY7C1323BV25-100BZXC |
18-Mbit 4-Word Burst SRAM with DDR-I Architecture |
Cypress |
17 |
CY7C1373DV25-100BGXC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture |
Cypress |
18 |
CY7C1471V25-100BZC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
19 |
CY7C1471V25-100BZXC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
20 |
CY7C1473V25-100BZC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
21 |
CY7C1473V25-100BZXC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
22 |
CY7C1475V25-100BGC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
23 |
CY7C1475V25-100BGXC |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
Cypress |
24 |
M27C405-100B1TR |
4 Mbit 512Kb x 8 OTP EPROM |
ST Microelectronics |
25 |
M27C405-100B6TR |
4 Mbit 512Kb x 8 OTP EPROM |
ST Microelectronics |
26 |
PSMN015-100B |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
27 |
PSMN015-100B |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
28 |
PSMN015-100B |
N-channel TrenchMOS(tm) transistor |
Philips |
29 |
PSMN9R5-100BS |
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK |
Nexperia |
30 |
PSMN9R5-100BS |
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
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