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Datasheets for 5.53

Datasheets found :: 17
Page: | 1 |
No. Part Name Description Manufacturer
1 HM53461P-10 100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
2 HM53461P-12 120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
3 HM53461P-15 150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
4 HM53461ZP-10 100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
5 HM53461ZP-12 120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
6 HM53461ZP-15 150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM Hitachi Semiconductor
7 SMJ4464 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory Texas Instruments
8 SMJ4464-12 120ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory Texas Instruments
9 SMJ4464-15 150ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory Texas Instruments
10 SMJ4464-20 200ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory Texas Instruments
11 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
12 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
13 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
14 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
15 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
16 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
17 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA


Datasheets found :: 17
Page: | 1 |



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