| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3EZ130D |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
3EZ130D1 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 3 |
3EZ130D10 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 4 |
3EZ130D2 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 5 |
3EZ130D3 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 6 |
3EZ130D4 |
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 7 |
ATR2808 |
2.9/5.8 GHz WDCET/ISM Single-chip Transceiver |
Atmel |
| 8 |
ATR7039 |
Up-conversion Mixer IC from 2.4 GHz to 5.8 GHz |
Atmel |
| 9 |
BUK7K6R2-40E |
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET |
Nexperia |
| 10 |
BUK7K6R2-40E |
Dual N-channel 40 V, 5.8 mΩ standard level MOSFET |
NXP Semiconductors |
| 11 |
BUK9K5R6-30E |
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET |
Nexperia |
| 12 |
CHR0100A-SJ |
5.8 GHz I/Q mixer. GaAs monolithic microwave IC. |
United Monolithic Semiconductors |
| 13 |
CMM1335-AK-00S0 |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 14 |
CMM1335-AK-00ST |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 15 |
CMM1335-AK-00T0 |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 16 |
CMM1335-AK-00TT |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier |
CELERITEK |
| 17 |
DS1099U-N |
255.8 Hz, Low-frequency dual econ oscillator |
MAXIM - Dallas Semiconductor |
| 18 |
E2502H58 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1531.15 nm. Frequency 195.8 THz. |
Agere Systems |
| 19 |
HMC358MS8G |
MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
Hittite Microwave Corporation |
| 20 |
MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 21 |
MGFC39V5258 |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 22 |
MGFC39V5258A |
5.2-5.8 GHz band 8W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 23 |
MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 24 |
MGFC47V5864 |
5.8 - 6.4 GHz BAND 50W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 25 |
MMSF4N01HD |
TMOS MOSFET 5.8 AMPERES 20 VOLTS |
Motorola |
| 26 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 27 |
NEZ5258-15B |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 28 |
NEZ5258-15BD |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 29 |
NEZ5258-4B |
5.2-5.8 GHz, 4 W, C-band power GaAs MESFET |
NEC |
| 30 |
NEZ5258-8B |
5.2-5.8 GHz, 8 W, C-band power GaAs MESFET |
NEC |
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