| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0242.050UA |
Barrier network fuse. Axial leaded. Ampere rating .050. Color coding red. |
Littelfuse |
| 2 |
0242.050UAT1 |
Barrier network fuse. Axial leaded, taped . Ampere rating .050. Color coding red. |
Littelfuse |
| 3 |
0242.050UR |
Barrier network fuse. Surface mount. Ampere rating 0.050. Color coding red. |
Littelfuse |
| 4 |
0242.250UA |
Barrier network fuse. Axial leaded. Ampere rating .250. Color coding black. |
Littelfuse |
| 5 |
0242.250UAT1 |
Barrier network fuse. Axial leaded, taped . Ampere rating .250. Color coding black. |
Littelfuse |
| 6 |
0242.250UR |
Barrier network fuse. Surface mount. Ampere rating 0.250. Color coding black. |
Littelfuse |
| 7 |
06631.25HXLL |
LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 50. |
Littelfuse |
| 8 |
06631.25HXSL |
LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 50. |
Littelfuse |
| 9 |
06631.25ZRLL |
LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating 1.25, voltage rating 250, nominal resistance cold ohms 50. |
Littelfuse |
| 10 |
15KW150 |
150.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 11 |
15KW150A |
150.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
| 13 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
| 14 |
1N5652 |
Diode TVS Single Uni-Dir 50.2V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 15 |
1N6290 |
Diode TVS Single Uni-Dir 50.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 16 |
1N6290C |
Diode TVS Single Bi-Dir 50.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 17 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 18 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 19 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 20 |
5KP150 |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 21 |
5KP150A |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 22 |
AR3001LTS10 |
1000 V, 5835 A, 50.4 kA rectifier diode |
POSEICO SPA |
| 23 |
AR609S06 |
600 V, 5380 A, 50.4 kA rectifier diode |
POSEICO SPA |
| 24 |
B511N |
Temperature-current converter=-550...+125°C |
RFT |
| 25 |
BC170C |
Si-PLANAR-npn TRANSISTOR h21E=β=150...600 at 1mA |
IPRS Baneasa |
| 26 |
BD533 |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 27 |
BD533J |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 - 75 hFE. |
Continental Device India Limited |
| 28 |
BD533K |
50.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 29 |
BD534 |
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
| 30 |
BD535 |
50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE. |
Continental Device India Limited |
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