| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GMA2275C |
2.0 INCH (50.8 mm) 5x7 DOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 2 |
GMC2257C |
2.0 INCH (50.8 mm) 5 X 7 DOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 3 |
GMC2275C |
2.0 inch (50.8mm) 5x7 DDOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 4 |
PD-04A200 |
4 Character, 16 Segment Alphanumeric Display with 2.00"" [50.80mm] High Characters, 200 Foot Lamberts Brightness, Designed for Multiplexed Operation, Edgeboard Connection, End Stackable |
Vishay |
| 5 |
UVP-2057 |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 6 |
UVP-2057A |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 7 |
UVP-2157A |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 8 |
UVP-2344 |
2.0 inch ( 50.80mm ) 4X4 DOT MATRIX LED DISPLAY |
Unity Opto Technology |
| 9 |
UVP-2X44 |
2.0 inch ( 50.80mm ) 4X4 DOT MATRIX LED DISPLAY |
Unity Opto Technology |
| 10 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 11 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 12 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 13 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 14 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 15 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 16 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 17 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 18 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 20 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 21 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 22 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 23 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 24 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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