| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GT50J102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 3 |
MG150J1BS11 |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 4 |
MG150J1JS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5 |
MG150J1ZS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 6 |
MG50J1BS11 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 7 |
MG50J1ZS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 8 |
MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 9 |
SF150J11 |
Silicon alloy-diffused junction thyristor 150A 600V |
TOSHIBA |
| 10 |
SF50J11 |
THYRISTOR |
TOSHIBA |
| 11 |
SF50J12 |
Silicon alloy-diffused junction thyristor 50A 600V |
TOSHIBA |
| 12 |
SH150J11 |
Silicon alloy-diffused junction high speed thyristor 150A 600V |
TOSHIBA |
| 13 |
SH50J11 |
THYRISTOR |
TOSHIBA |
| 14 |
SH50J11 |
Silicon alloy-diffused junction high speed thyristor 50A 600V |
TOSHIBA |
| | | |
