| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GLT41316-50J3 |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
etc |
| 2 |
GLT4160L04-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 3 |
GLT4160L04E-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 4 |
GLT4160L04S-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 5 |
GLT4160L04SE-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 6 |
GT50J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 7 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 8 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 9 |
GT50J328 |
Discrete IGBT |
TOSHIBA |
| 10 |
GT50J341 |
Discrete IGBT |
TOSHIBA |
| 11 |
GT50J342 |
Discrete IGBT |
TOSHIBA |
| 12 |
TK50J30D |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| | | |
