No. |
Part Name |
Description |
Manufacturer |
1 |
0R1TYZ41 |
Silicon diffused junction high-voltage rectifier 150kV |
TOSHIBA |
2 |
1N4877 |
Rectifier Diode 50kV |
Motorola |
3 |
BU97550KV-M |
Low Duty LCD Segment Drivers for Automotive applications |
ROHM |
4 |
BU97550KV-ME2 |
Low Duty LCD Segment Drivers for Automotive applications |
ROHM |
5 |
BYX29-150000 |
Controlled Avalanche High Voltage Diode 150kV |
Philips |
6 |
BYX29/150000 |
E.T.H. RECTIFIER DIODE 150kV |
mble |
7 |
CY7C1150KV18-400BZXC |
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
8 |
CY7C1150KV18-400BZXI |
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
9 |
CY7C1250KV18-400BZC |
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
10 |
CY7C1250KV18-400BZI |
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
11 |
CY7C1250KV18-400BZXC |
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
12 |
CY7C1250KV18-450BZXC |
36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
13 |
CY7C1550KV18-400BZC |
72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
14 |
CY7C1550KV18-400BZXC |
72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
15 |
CY7C1650KV18-400BZC |
144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
16 |
CY7C1650KV18-450BZC |
144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
17 |
ETQP3M150KVN |
Power Choke Coil for Automotive-LP (MC type) |
Panasonic |
18 |
ETQP4M150KVC |
Power Choke Coil for Automotive-LP (MC type) |
Panasonic |
19 |
ETQP4M150KVK |
Power Choke Coil for Automotive-LP (MC type) |
Panasonic |
20 |
L8121-01 |
150kV MICROFOCUS X-RAY SOURCE |
Hamamatsu Corporation |
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