No. |
Part Name |
Description |
Manufacturer |
1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
3 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
4 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
5 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
6 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
7 |
2N5031 |
NPN silicon high frequency transistor 2.5dB - 450MHz |
Motorola |
8 |
2N5032 |
NPN silicon high frequency transistor 3.0dB - 450MHz |
Motorola |
9 |
2N5846 |
50MHz RF power silicon NPN transistor |
Motorola |
10 |
2N5847 |
NPN silicon RF power transistor 7W 50MHz |
Motorola |
11 |
2N5848 |
NPN silicon RF power transistor 20W 50MHz |
Motorola |
12 |
2N5849 |
NPN silicon RF power transistor 40W - 50MHz |
Motorola |
13 |
2N5862 |
NPN silicon RF power transistor 90W peak - 150MHz |
Motorola |
14 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
15 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
16 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
17 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
18 |
2SC378 |
Silicon NPN planar transistor fT=150MHz |
TOSHIBA |
19 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
20 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
21 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
22 |
2SC998 |
Silicon NPN epitaxial planar VHF transistor ft=450MHz |
TOSHIBA |
23 |
40340 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
24 |
40341 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
25 |
40819 |
MOS Field-Effect Transistor N-Channel Depletion Type, up to 250MHz |
RCA Solid State |
26 |
5962-0625501 |
350MHz Fixed Gain Amplifiers with Enable |
Intersil |
27 |
5962F-0153401QXA |
50MHz serializer. Lead finish hot solder dipped. QML class Q. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
28 |
5962F-0153401QXC |
50MHz serializer. Lead finish gold. QML class Q. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
29 |
5962F-0153401QXX |
50MHz serializer. Lead finish factory option. QML class Q. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
30 |
5962F-0153401VXA |
50MHz serializer. Lead finish hot solder dipped. QML class V. Total dose 3E5 rad(Si). |
Aeroflex Circuit Technology |
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