| No. |
Part Name |
Description |
Manufacturer |
| 1 |
489D106X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 2 |
489D156X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 3 |
489D226X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 4 |
489D685X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 5 |
APT50N60JCCU2 |
Si MOSFET + SiC Diode Module |
Microsemi |
| 6 |
D450N600 |
450A 600V Power Rectifier Diode |
IPRS Baneasa |
| 7 |
D50N6 |
50A 600V Rectifier Diode |
IPRS Baneasa |
| 8 |
D50N6R |
50A 600V Rectifier Diode |
IPRS Baneasa |
| 9 |
FGA50N60LS |
Discrete, Short Circuit Rated IGBT with Diode (Low saturation voltage) |
Fairchild Semiconductor |
| 10 |
FGH50N6S2 |
600V, SMPS II Series N-Channel IGBT |
Fairchild Semiconductor |
| 11 |
FGH50N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode |
Fairchild Semiconductor |
| 12 |
FGH50N6S2D_NL |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode |
Fairchild Semiconductor |
| 13 |
FGH50N6S2_NL |
600V, SMPS II Series N-Channel IGBT |
Fairchild Semiconductor |
| 14 |
IGB50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 15 |
IGP50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 16 |
IGW50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
| 17 |
IKW50N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
| 18 |
IXGH50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 19 |
IXGN50N60B |
HiPerFASTTM IGBT |
IXYS Corporation |
| 20 |
IXGN50N60BD2 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 21 |
IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 22 |
IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT |
IXYS |
| 23 |
IXSH50N60B |
Short Circuit SOA Capability |
IXYS Corporation |
| 24 |
KGF50N60KDA |
IGBT |
Korea Electronics (KEC) |
| 25 |
KGT50N60KDA |
IGBT |
Korea Electronics (KEC) |
| 26 |
M27C202-150N6TR |
2 Mbit 128Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 27 |
M27C405-150N6TR |
4 Mbit 512Kb x 8 OTP EPROM |
ST Microelectronics |
| 28 |
M27C801-150N6TR |
8 Mbit (1Mb x 8) EPROM, 5V, 150ns |
SGS Thomson Microelectronics |
| 29 |
M27C801-150N6TR |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 30 |
M27C801-150N6X |
8 Mbit (1Mb x 8) EPROM, 5V, 150ns |
SGS Thomson Microelectronics |
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