| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2MBI150NE-120 |
IGBT MODULE ( N series ) |
Fuji Electric |
| 2 |
7MBR50NE-060 |
Power Integrated Module (PIM) |
Fuji Electric |
| 3 |
LXT350NE |
Integrated T1/E1 S/H transceiver with crystal-less jitter attenuation |
Level One |
| 4 |
STB50NE08 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 5 |
STB50NE08 |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 6 |
STB50NE10 |
N - CHANNEL 100V - 0.021Ohm - 50A - D 2 PAK STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 7 |
STB50NE10 |
N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 8 |
STB50NE10 |
N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 9 |
STB50NE10L |
N - CHANNEL 100V - 0.020Ohm - 50A - D 2 PAK STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 10 |
STB50NE10L |
N-CHANNEL 100V - 0.020 OHM - 50A D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 11 |
STB50NE10LT4 |
N-CHANNEL 100V - 0.020 OHM - 50A D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 12 |
STB50NE10T4 |
N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET |
ST Microelectronics |
| 13 |
STP50NE08 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 14 |
STP50NE08 |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 15 |
STP50NE10 |
N - CHANNEL 100V - 0.021Ohm - 50A TO-220 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 16 |
STP50NE10 |
N-CHANNEL 100V - 0.021 OHM - 50A - TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
| 17 |
STP50NE10L |
N - CHANNEL 100V - 0.020Ohm - 50A TO-220 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 18 |
STP50NE10L |
N-CHANNEL 100V - 0.020 OHM - 50A - TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
| | | |
