No. |
Part Name |
Description |
Manufacturer |
1 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
2 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
3 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
4 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
5 |
5962-3826701 |
128K EEPROM MIL-STD-883, 250ns |
Intersil |
6 |
5962-3826705 |
128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns |
Intersil |
7 |
5962-9086901 |
64kx8 EEPROM CMOS, MIL-STD-883, 250ns |
Intersil |
8 |
5962-9086902 |
64kx8 EEPROM, CMOS, MIL-STD-883, 250ns |
Intersil |
9 |
5962-9086905 |
64kx8, CMOS, EEPROM, MIL-STD-883, 150ns |
Intersil |
10 |
5962-9086906MXAC |
64kx8 EEPROM, CMOS, MIL-STD-883, 150ns |
Intersil |
11 |
5962-9086906MYAC |
64kx8 EEPROM, CMOS, MIL-STD-883, 150ns |
Intersil |
12 |
A23W8308H |
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM |
AMIC Technology |
13 |
A23W8308L |
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM |
AMIC Technology |
14 |
A23W8308M |
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM |
AMIC Technology |
15 |
A23W9308H |
120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM |
AMIC Technology |
16 |
A23W9308L |
120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM |
AMIC Technology |
17 |
A23W9308M |
120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM |
AMIC Technology |
18 |
A29002-150 |
150ns 20mA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
19 |
A29002L-150 |
150ns 20mA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
20 |
A29002V-150 |
150ns 20mA 256K x 8bit CMOS 5.0V-only |
AMIC Technology |
21 |
A42L0616S-50L |
50ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
22 |
A42L0616V-50L |
50ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
23 |
A42L2604S-50L |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
24 |
A42L2604V-50L |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
25 |
A42L2604V-50LU |
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode |
AMIC Technology |
26 |
A67L7332E-4.5 |
Cycle time:8.50ns;accesstime:4.5ns 128K x 32 LVTTL, pipelined DBA SRAM |
AMIC Technology |
27 |
A67L8318E-4.5 |
Cycle time:8.50ns;accesstime:4.5ns 256K x 18 LVTTL, pipelined DBA SRAM |
AMIC Technology |
28 |
ACT-F128K8N-150F6Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
29 |
ACT-F128K8N-150F7Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
30 |
ACT-F128K8N-150P4Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
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