No. |
Part Name |
Description |
Manufacturer |
1 |
FSF250R3 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
2 |
FSF450R3 |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
3 |
FSF9150R3 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
4 |
FSF9250R3 |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
5 |
FSYA150R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
6 |
FSYA250R3 |
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
7 |
FSYA450R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
8 |
FSYA9150R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
9 |
MRF5S19150 |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
10 |
MRF5S19150R3 |
1990 MHz, 32 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
11 |
MRF5S19150R3 |
RF Power Field Effect Transistors |
Motorola |
12 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
13 |
MRF5S21150R3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
14 |
MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
15 |
RC10-50R3-1 |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
16 |
RC10-50R3-3 |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
17 |
RC10-50R3-LW |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
18 |
RC20-50R3-1 |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
19 |
RC20-50R3-3 |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
20 |
RC20-50R3-LW |
RC SERIES RIBBON CONNECTORS |
Hirose Electric |
21 |
ST1900C50R3 |
Phase control thyristor |
International Rectifier |
22 |
ST1900C50R3L |
Phase control thyristor |
International Rectifier |
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