| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 2 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 4 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 5 |
FGA50S110P |
1100V, 50A, Shorted-anode IGBT |
Fairchild Semiconductor |
| 6 |
SF150S11 |
Silicon alloy-diffused junction thyristor 150A 1400V |
TOSHIBA |
| 7 |
TM50S116T |
SDRAM |
etc |
| | | |
