No. |
Part Name |
Description |
Manufacturer |
1 |
1.5SMC150 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
2 |
1.5SMC150A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
3 |
1N4001 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 50V. |
Jinan Gude Electronic Device |
4 |
1N659 |
General purpose low diode. Working inverse voltage 50V. |
Fairchild Semiconductor |
5 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
6 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
7 |
1SMB150 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 600W peak power, 3.0W steady state. |
Motorola |
8 |
1SMB150A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 600W peak power, 3.0W steady state. |
Motorola |
9 |
1SMC150 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
10 |
1SMC150A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 150V. 1500W peak power, 5.0W steady state. |
Motorola |
11 |
2N3650 |
35A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
12 |
2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 150V. |
General Electric Solid State |
13 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
14 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
15 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
16 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
17 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
18 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
19 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
20 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
21 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
22 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
23 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
24 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
25 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
26 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
27 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
28 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
29 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
30 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
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