No. |
Part Name |
Description |
Manufacturer |
1 |
CY7C1512V18 |
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
2 |
CY7C1512V18-167BZCES |
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
3 |
CY7C1512V18-200BZC |
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
4 |
CY7C1512V18-200BZCES |
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
5 |
CY7C1512V18-250BZCES |
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
6 |
EDI8L32512V12AC |
12ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
7 |
EDI8L32512V15AC |
15ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
8 |
EDI8L32512V15AI |
15ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
9 |
EDI8L32512V17AC |
17ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
10 |
EDI8L32512V17AI |
17ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
11 |
FM27C512V120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
12 |
FM27C512V150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
13 |
MT55L512V18P |
8Mb ZBT SRAM |
Micron Technology |
14 |
NM27C512V100 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
15 |
NM27C512V120 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
16 |
NM27C512V120 |
524,288-bit (64K x 8) high performance CMOS EPROM, 120ns |
National Semiconductor |
17 |
NM27C512V150 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
18 |
NM27C512V150 |
524,288-bit (64K x 8) high performance CMOS EPROM, 150ns |
National Semiconductor |
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