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Datasheets for 53.

Datasheets found :: 196
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No. Part Name Description Manufacturer
1 1.5KE170 Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
2 1.5KE170C Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
3 15KP120A Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. Panjit International Inc
4 15KP120CA Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. Panjit International Inc
5 15KP180 Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. Panjit International Inc
6 15KP180C Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. Panjit International Inc
7 ARX4418D Molded dual variable amplitude transceiver for macair A3818, A5690, A5232, A4905 and MIL-STD-1553. Normally low. Aeroflex Circuit Technology
8 BYT53. Ultra Fast Avalanche Sinterglass Diode Vishay
9 D2525P30 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 193.0. Wavelength 1553.33. Tolerance +-0.4nm. Agere Systems
10 D2525P892 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 189.2. Wavelength 1584.53. Tolerance +-0.4nm. Agere Systems
11 DSC1102BI2-153.6000 Clock and Timing - Oscillators Microchip
12 DSC1102BI2-153.6000T Clock and Timing - Oscillators Microchip
13 E2502H30 2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1553.33 nm. Frequency 193.0 THz. Agere Systems
14 HDSP-B571 HDSP-B571 · 5 x 7 Bi-Color General Purpose Dot Matrix Displays 53.2 mm (2.09 inch) Package Agilent (Hewlett-Packard)
15 HDSP-B573 HDSP-B573 · 5 x 7 Bi-Color General Purpose Dot Matrix Displays 53.2 mm (2.09 inch) Package Agilent (Hewlett-Packard)
16 HDSP-B581 HDSP-B581 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
17 HDSP-B582 HDSP-B582 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
18 HDSP-H571 HDSP-H571 · 53.2 mm (2.09 inch) General Purpose 5X7 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
19 HDSP-H573 HDSP-H573 · 53.2 mm (2.09 inch) General Purpose 5X7 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
20 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
21 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
22 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
23 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
24 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
25 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
26 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
27 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
28 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
29 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
30 KM418RD8AC-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic


Datasheets found :: 196
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