No. |
Part Name |
Description |
Manufacturer |
1 |
D2525P30 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 193.0. Wavelength 1553.33. Tolerance +-0.4nm. |
Agere Systems |
2 |
E2502H30 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1553.33 nm. Frequency 193.0 THz. |
Agere Systems |
3 |
HDSP-B581 |
HDSP-B581 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
4 |
HDSP-B582 |
HDSP-B582 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
5 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
6 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
7 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
8 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
9 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
10 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
11 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
12 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
13 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
14 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
15 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
16 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
17 |
MQF53.3-1000/03 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
18 |
NDL7911PC533 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. |
NEC |
19 |
NDL7911PD533 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. |
NEC |
20 |
NDL7912PC533 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. |
NEC |
21 |
NDL7912PD533 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. |
NEC |
22 |
NX8560LJ533-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. FC-UPC connector. |
NEC |
23 |
NX8560LJ533-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC connector. |
NEC |
24 |
NX8560SJ533-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. FC-UPC connector. |
NEC |
25 |
NX8560SJ533-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. SC-UPC connector. |
NEC |
26 |
NX8562LB533-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. Anode ground. FC-PC connector. |
NEC |
27 |
NX8562LF533-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. Anode floating. FC-PC connector. |
NEC |
28 |
NX8563LA533-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC. |
NEC |
29 |
NX8563LA533-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-APC. |
NEC |
30 |
NX8563LAS533-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC. |
NEC |
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