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Datasheets for 53.3

Datasheets found :: 158
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 D2525P30 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 193.0. Wavelength 1553.33. Tolerance +-0.4nm. Agere Systems
2 E2502H30 2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1553.33 nm. Frequency 193.0 THz. Agere Systems
3 HDSP-B581 HDSP-B581 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
4 HDSP-B582 HDSP-B582 · 53.3 mm (2.1 inch) General Purpose 5X8 Dot Matrix Alphanumeric Displays Agilent (Hewlett-Packard)
5 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
6 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
7 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
8 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
9 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
10 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
11 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
12 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
13 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
14 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
15 KM418RD8AC-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
16 KM418RD8AD-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
17 MQF53.3-1000/03 Monolithic Crystal Filter, Selected customer types Vectron
18 NDL7911PC533 1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. NEC
19 NDL7911PD533 1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. NEC
20 NDL7912PC533 1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. NEC
21 NDL7912PD533 1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1553.33 nm. Frequency 193.0 THz. NEC
22 NX8560LJ533-BC EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. FC-UPC connector. NEC
23 NX8560LJ533-CC EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC connector. NEC
24 NX8560SJ533-BC EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. FC-UPC connector. NEC
25 NX8560SJ533-CC EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1553.329 nm. Frequency 193.00 THz. SC-UPC connector. NEC
26 NX8562LB533-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. Anode ground. FC-PC connector. NEC
27 NX8562LF533-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. Anode floating. FC-PC connector. NEC
28 NX8563LA533-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC. NEC
29 NX8563LA533-CD Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-APC. NEC
30 NX8563LAS533-CC Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. SC-UPC. NEC


Datasheets found :: 158
Page: | 1 | 2 | 3 | 4 | 5 |



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