| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2532 |
Rectifier Diode |
Motorola |
| 2 |
1N3532 |
Zener Diode 39V |
Motorola |
| 3 |
1N3532 |
Diode Zener Single 39V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 4 |
1N3532A |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1N4532 |
COMPUTER DIODE Switching |
Microsemi |
| 6 |
1N4532 |
Signal Diode |
Motorola |
| 7 |
1N4532 |
High-speed diodes |
Philips |
| 8 |
1N4532 |
Silicon Switching Diode |
Texas Instruments |
| 9 |
1N532 |
Rectifier Diode 300V 0.3A |
Motorola |
| 10 |
1N532 |
Diode Zener Single 87V 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 11 |
1N5320 |
Rectifier Diode 100V 1A |
Motorola |
| 12 |
1N5324 |
Rectifier Diode 15000V 0.01A |
Motorola |
| 13 |
1N5326 |
Rectifier Diode 100V 12A |
Motorola |
| 14 |
1N5329 |
Rectifier Diode 100V 0.135A |
Motorola |
| 15 |
1N5532 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 16 |
1N5532 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 17 |
1N5532 |
Low Voltage Avalanche Zener |
Microsemi |
| 18 |
1N5532 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 12V ±20% tolerance |
Motorola |
| 19 |
1N5532 |
Diode Zener Single 12V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N5532A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N5532A |
Low Voltage Avalanche Zener |
Microsemi |
| 22 |
1N5532A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 12V ±10% tolerance |
Motorola |
| 23 |
1N5532A |
Diode Zener Single 12V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 24 |
1N5532A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 25 |
1N5532A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 26 |
1N5532AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 27 |
1N5532AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 28 |
1N5532B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 29 |
1N5532B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 30 |
1N5532B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| | | |
