| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5529 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 2 |
1N5529 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 3 |
1N5529 |
Low Voltage Avalanche Zener |
Microsemi |
| 4 |
1N5529 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±20% tolerance |
Motorola |
| 5 |
1N5529 |
Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 6 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5529A |
Low Voltage Avalanche Zener |
Microsemi |
| 8 |
1N5529A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±10% tolerance |
Motorola |
| 9 |
1N5529A |
Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 10 |
1N5529A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 11 |
1N5529A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 12 |
1N5529AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 13 |
1N5529AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 14 |
1N5529B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 15 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 16 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 17 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 18 |
1N5529B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±5% tolerance |
Motorola |
| 19 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N5529B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 21 |
1N5529B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 22 |
1N5529B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 23 |
1N5529B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 24 |
1N5529BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 25 |
1N5529BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 26 |
1N5529BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 27 |
1N5529C |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 28 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 30 |
1N5529C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
