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Datasheets for 5551

Datasheets found :: 216
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N5551 Leaded Rectifier Fast Recovery Central Semiconductor
2 1N5551 GLASS PASSIVATED JUNCTION RECTIFIER General Semiconductor
3 1N5551 Standard Rectifier (trr more than 500ns) Microsemi
4 1N5551 Diode Switching 400V 3A 2-Pin GPR-3A New Jersey Semiconductor
5 1N5551 5A standard recovery rectifier diode, 400V Semtech
6 1N5551 Standard Sinterglass Diode Vishay
7 1N5551 400 V rectifier 5.0 A forward current, 2000 ns recovery time Voltage Multipliers
8 1N5551E3 Standard Rectifier (trr more than 500ns) Microsemi
9 1N5551US Standard Rectifier (trr more than 500ns) Microsemi
10 1N5551USE3 Standard Rectifier (trr more than 500ns) Microsemi
11 2N5551 NPN Silicon Transistor (General purpose amplifier High voltage application) AUK Corp
12 2N5551 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Boca Semiconductor Corporation
13 2N5551 Leaded Small Signal Transistor General Purpose Central Semiconductor
14 2N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE Continental Device India Limited
15 2N5551 NPN General Purpose Amplifier Fairchild Semiconductor
16 2N5551 NPN Silicon Epitaxial Planar Transistor Honey Technology
17 2N5551 High Voltage Transistor Korea Electronics (KEC)
18 2N5551 TO-92 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
19 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
20 2N5551 Amplifier Transistors Motorola
21 2N5551 NPN Transistor - General Purpose AMPS and Switches National Semiconductor
22 2N5551 NPN General Purpose Amplifier National Semiconductor
23 2N5551 Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box New Jersey Semiconductor
24 2N5551 Small Signal Amplifier NPN ON Semiconductor
25 2N5551 NPN high-voltage transistors Philips
26 2N5551 NPN Epitaxial Silicon Transistor Samsung Electronic
27 2N5551 NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
28 2N5551 Silicon NPN epitaxial transistor (PCT Process) TOSHIBA
29 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
30 2N5551-T Transistor Rectron Semiconductor


Datasheets found :: 216
Page: | 1 | 2 | 3 | 4 | 5 |



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