| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4811A |
Diode VAR Cap Single 55V 47pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 2 |
1N5633A |
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 3 |
1N6059 |
Diode TVS Single Bi-Dir 55V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 4 |
1N6070 |
Diode TVS Single Bi-Dir 155V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 5 |
1N6271A |
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 6 |
1N826 |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 7 |
1N826A |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-213AA |
New Jersey Semiconductor |
| 8 |
1N828 |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 9 |
1SS355VM |
Switching Diode |
ROHM |
| 10 |
1SS355VMFH |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 11 |
1SS355VMFHTE-17 |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 12 |
1SS355VMTE-17 |
Switching Diode |
ROHM |
| 13 |
2N1480 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 14 |
2N1482 |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 15 |
2N1482/S |
Trans GP BJT NPN 55V 1.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 16 |
2N1484 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
| 17 |
2N1486 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8 |
New Jersey Semiconductor |
| 18 |
2N3054 |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 19 |
2N3054A |
Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 20 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 21 |
2N3677 |
Trans GP BJT NPN 55V 3-Pin TO-39 |
New Jersey Semiconductor |
| 22 |
2N5492 |
Trans GP BJT NPN 55V 7A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 23 |
2N6049 |
Trans GP BJT PNP 55V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 24 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
| 25 |
2SA1120 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
| 26 |
2SA843 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 27 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 28 |
5962-9232501MXA |
3A, 55V H-Bridge |
National Semiconductor |
| 29 |
5962-9232501MXA |
3A, 55V H-Bridge |
National Semiconductor |
| 30 |
5962-9232501MXA |
2.4A, 55V H-Bridge 24-CDIP SB -55 to 125 |
Texas Instruments |
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