| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE300A |
256.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2 |
1.5KE300CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 256.00 V. Test current IT = 1 mA. |
Bytes |
| 3 |
1.5KE440 |
356.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 4 |
1.5KE440C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. |
Bytes |
| 5 |
15KP200A |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 6 |
15KP200CA |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 7 |
1N4758A |
56.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 8 |
1N5754B |
56.0V Voltage Reference Diode |
Philips |
| 9 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 10 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 11 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 13 |
APT40M75JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm |
Advanced Power Technology |
| 14 |
APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm |
Advanced Power Technology |
| 15 |
MM3Z56VB |
56.0V 200mW 2% Zener, SOD323F |
Fairchild Semiconductor |
| 16 |
MM3Z56VC |
56.0V 200mW 5% Zener, SOD323F |
Fairchild Semiconductor |
| 17 |
MV1644 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 56.0pF |
Motorola |
| 18 |
MV2112 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 56.0pF |
Motorola |
| 19 |
NTE5278AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 56.0V. Zener test current Izt = 220mA. |
NTE Electronics |
| 20 |
P4KE300A |
256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 21 |
P4KE300A-T3 |
Reverse stand-off voltage: 256.00V transient voltage suppressor |
Won-Top Electronics |
| 22 |
P4KE300A-TB |
Reverse stand-off voltage: 256.00V transient voltage suppressor |
Won-Top Electronics |
| 23 |
P4KE300CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 256.00 V. Test current IT = 1 mA. |
Bytes |
| 24 |
P4KE300CA |
256.00V; 400W transient voltage suppressor |
Diodes |
| 25 |
P4KE300CA-T3 |
Reverse stand-off voltage: 256.00V transient voltage suppressor |
Won-Top Electronics |
| 26 |
P4KE300CA-TB |
Reverse stand-off voltage: 256.00V transient voltage suppressor |
Won-Top Electronics |
| 27 |
P4KE440 |
356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 28 |
P4KE440-T3 |
Reverse stand-off voltage: 356.00V transient voltage suppressor |
Won-Top Electronics |
| 29 |
P4KE440-TB |
Reverse stand-off voltage: 356.00V transient voltage suppressor |
Won-Top Electronics |
| 30 |
P4KE440C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. |
Bytes |
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