No. |
Part Name |
Description |
Manufacturer |
1 |
1N5616U |
400 V rectifier 1.5 A forward current, 2000 ns recovery time |
Voltage Multipliers |
2 |
1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3 |
DXT5616U |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
4 |
JAN1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
5 |
JANS1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
6 |
JANTX1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
7 |
JANTXV1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
8 |
K9F5616Q0B/K9F5616U0B |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory Data Sheet |
Samsung Electronic |
9 |
K9F5616U0B-DCB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
10 |
K9F5616U0B-DIB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
11 |
K9F5616U0B-HCB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
12 |
K9F5616U0B-HIB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
13 |
K9F5616U0B-PCB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
14 |
K9F5616U0B-PIB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
15 |
K9F5616U0B-YCB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
16 |
K9F5616U0B-YIB0 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
17 |
K9F5616U0C |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
18 |
K9F5616U0C-D |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
19 |
K9F5616U0C-D |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
20 |
K9F5616U0C-DCB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
21 |
K9F5616U0C-DIB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
22 |
K9F5616U0C-H |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
23 |
K9F5616U0C-H |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
24 |
K9F5616U0C-HCB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
25 |
K9F5616U0C-HIB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
26 |
K9F5616U0C-P |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
27 |
K9F5616U0C-P |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
Samsung Electronic |
28 |
K9F5616U0C-PCB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
29 |
K9F5616U0C-PIB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
30 |
K9F5616U0C-Y |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
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