| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256JC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 2 |
28LV256JC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
28LV256JC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 4 |
28LV256JC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 6 |
28LV256JC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 7 |
28LV256JC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 8 |
28LV256JC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 9 |
HSP45256JC-25 |
Binary Correlator |
Intersil |
| 10 |
HSP45256JC-33 |
Binary Correlator |
Intersil |
| 11 |
UT61256JC-10 |
Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
| 12 |
UT61256JC-12 |
32K X 8 BIT HIGH SPEED CMOS SRAM |
UTRON Technology |
| 13 |
UT61256JC-15 |
32K X 8 BIT HIGH SPEED CMOS SRAM |
UTRON Technology |
| 14 |
UT61256JC-8 |
32K X 8 BIT HIGH SPEED CMOS SRAM |
UTRON Technology |
| 15 |
UT61L256JC-10 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
| 16 |
UT61L256JC-12 |
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
| 17 |
UT61L256JC-15 |
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
| 18 |
UT61L256JC-8 |
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
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