No. |
Part Name |
Description |
Manufacturer |
1 |
10DZ56P |
10W ZENER DIODE |
IPRS Baneasa |
2 |
10DZ56P |
10W 56V Zener diode in plastic case |
IPRS Baneasa |
3 |
1N4756P/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
4 |
1N4756P/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
5 |
1N4756Pe3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
6 |
1N4756Pe3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
7 |
1N4797 |
Diode VAR Cap Single 17V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
8 |
1N4797B |
Diode VAR Cap Single 17V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
9 |
1N4812 |
Diode VAR Cap Single 44V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
10 |
1N5453 |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
11 |
1N5453A |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
12 |
1N5453B |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
13 |
1N5453C |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
14 |
1N5453D |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
15 |
1N5473 |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
16 |
1N5473A |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
17 |
1N5473B |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
18 |
1N5473D |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
19 |
1N5692A |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
20 |
1N5692B |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7 |
New Jersey Semiconductor |
21 |
28LV256PC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
22 |
28LV256PC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
23 |
28LV256PC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
24 |
28LV256PC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
25 |
28LV256PC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
26 |
28LV256PC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
27 |
28LV256PC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
28 |
28LV256PC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
29 |
28LV256PI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
30 |
28LV256PI-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
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