| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256SC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 2 |
28LV256SC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
28LV256SC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 4 |
28LV256SC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 5 |
28LV256SC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 6 |
28LV256SC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 7 |
28LV256SC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 8 |
28LV256SC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 9 |
62LV256SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 10 |
74F1056SC |
8-Bit Schottky Barrier Diode Array |
Fairchild Semiconductor |
| 11 |
74F1056SCX |
8-Bit Schottky Barrier Diode Array |
Fairchild Semiconductor |
| 12 |
AT24C256SC |
2-wire, 128K and 256K Serial EEPROM |
Atmel |
| 13 |
BS62LV256SC |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 14 |
BS62UV256SC |
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
Brilliance Semiconductor |
| 15 |
SN74F1056SC |
8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY |
Texas Instruments |
| 16 |
SN74S1056SC |
8-bit Schottky Barrier Diode Bus-Termination Array |
Texas Instruments |
| 17 |
STC62WV256SC |
VERY LOW POWER/VOLTAGE CMOS SRAM |
etc |
| 18 |
TU25C256SC |
4.5V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
Turbo IC |
| 19 |
TU25C256SC |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
Turbo IC |
| 20 |
TU25C256SC-2.7 |
2.7V-5.5V, CMOS SPI bus 128K electrically erasable programmable ROM 32K x 8BIT EEPROM |
Turbo IC |
| 21 |
TU25C256SC-2.7 |
CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
Turbo IC |
| 22 |
U634H256SC25 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 23 |
U634H256SC25G1 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 24 |
U634H256SC35 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 25 |
U634H256SC35G1 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 26 |
U634H256SC45 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 27 |
U634H256SC45G1 |
POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 28 |
UL634H256SC35 |
LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 29 |
UL634H256SC35G1 |
LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM |
ZMD |
| 30 |
UL634H256SC45 |
LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM |
ZMD |
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