| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3157-1 |
0TC Reference Voltage Zener |
Microsemi |
| 2 |
1N6857-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
| 3 |
1N6857-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 4 |
1N6857-1E3 |
Si Schottky Rectifier Diodes |
Microsemi |
| 5 |
2N5457-59 |
N-Channel JFET General Purpose Amplifier/Switch |
Calogic |
| 6 |
2N5457-D |
JFETs - General Purpose N-Channel - Depletion |
ON Semiconductor |
| 7 |
2SB857-B |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
2SB857-C |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 9 |
2SB857-D |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 10 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 11 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 12 |
2SC4957-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 13 |
2SC4957-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 14 |
2SJ357-T1 |
P-channel MOS FET(-30V, +-3A) |
NEC |
| 15 |
2SJ357-T2 |
P-channel MOS FET(-30V, +-3A) |
NEC |
| 16 |
2SJ557-T1B |
Pch enhancement type MOS FET |
NEC |
| 17 |
2SJ557-T2B |
Pch enhancement type MOS FET |
NEC |
| 18 |
2SK1657-L |
MOS field effect transistor |
NEC |
| 19 |
2SK1657-T1B |
MOS field effect transistor |
NEC |
| 20 |
2SK1657-T2B |
MOS field effect transistor |
NEC |
| 21 |
2SK2157-T1 |
N-channel MOS type field effect transistor |
NEC |
| 22 |
2SK2157-T2 |
N-channel MOS type field effect transistor |
NEC |
| 23 |
2SK2257-01 |
N-channel MOS-FET |
Fuji Electric |
| 24 |
2SK2757-01 |
N-channel MOS-FET |
Fuji Electric |
| 25 |
2SK957-MR |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 26 |
30057-33 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 27 |
30157-33 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 28 |
3N257-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
| 29 |
5082-5557-00000 |
Low Current Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 30 |
5082-A157-00000 |
7.6 mm (0.3 inch) Micro Bright Seven Segment Displays |
Agilent (Hewlett-Packard) |
| | | |
