| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27C1028 |
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY |
Fujitsu Microelectronics |
| 2 |
AM29F080 |
8 Megabit (1,048,576 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 3 |
AM29F800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 4 |
AM29LV008 |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
| 5 |
AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
| 6 |
AM29LV800B-100 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 7 |
AM29LV800B-120 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 8 |
AM29LV800B-150 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 9 |
AM29LV800B-90R |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 10 |
AM29LV800T |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 11 |
AM29LV800T-100 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 12 |
AM29LV800T-120 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 13 |
AM29LV800T-150 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 14 |
AM29LV800T-90R |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 15 |
DEMO-MGA8657-6 |
DEMO-MGA8657-6 · Demonstration circuit board for MGA-86576 (2 - 3 GHz) |
Agilent (Hewlett-Packard) |
| 16 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
| 17 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
| 18 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 19 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
| 20 |
GM71C18163AT-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
| 21 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
| 22 |
GM71C18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 23 |
GM71C18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 24 |
GM71C18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 25 |
GM71C18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 26 |
GM71C18163CJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
| 27 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
| 28 |
GM71C18163CJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
| 29 |
GM71C18163CL-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
| 30 |
GM71C18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
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