| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5871 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 2 |
2N5871 |
Trans GP BJT PNP 60V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3 |
2N5871 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 4 |
2N5871 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 5 |
2N5871 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5873 |
Silicon Transistor Corporation |
| 6 |
2N5871/1 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 7 |
2N5871/2 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 8 |
2N5873 |
Silicon NPN Power Transistor, TO-3 package, PNP Complement 2N5871 |
Silicon Transistor Corporation |
| 9 |
ISL95871C |
SMBus Interfaced Battery Charger with Internal FETs |
Intersil |
| 10 |
L5871 |
Plastic package LED for camera auto-focus |
Hamamatsu Corporation |
| 11 |
MCH5871 |
BEAM-LEAD RESISTOR CHIP |
Motorola |
| 12 |
MM5871 |
Rhythm pattern generator |
National Semiconductor |
| 13 |
NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
| 14 |
SF_2N5871 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 15 |
SM5871A |
CMOS LSI(Digital Audio D/A Converter) |
Nippon Precision Circuits Inc |
| 16 |
SM5871AM |
Digital audio D/A converter |
Nippon Precision Circuits Inc |
| 17 |
SM5871AN |
Digital audio D/A converter |
Nippon Precision Circuits Inc |
| 18 |
SM5871AS |
Digital audio D/A converter |
Nippon Precision Circuits Inc |
| | | |
