| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5880 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5882 |
Silicon Transistor Corporation |
| 2 |
2N5882 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 3 |
2N5882 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 4 |
2N5882 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 5 |
2N5882 |
NPN silicon power transistor 160W |
National Semiconductor |
| 6 |
2N5882 |
Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 7 |
2N5882 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 8 |
2N5882 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5880 |
Silicon Transistor Corporation |
| 9 |
2N5882-D |
Silicon NPN High-Power Transistor |
ON Semiconductor |
| 10 |
2N5882A |
Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
2SC5882 |
SILICON NPN EPITAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 12 |
NSB5882 |
Multidigit LED numeric series |
National Semiconductor |
| 13 |
NTE5882 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. |
NTE Electronics |
| 14 |
SM5882AS |
Audio 3rd-order . D/A Converter |
Nippon Precision Circuits Inc |
| 15 |
UPD65882 |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 16 |
UPD65882F1-XXX-CN1 |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 17 |
UPD65882GA-XXX-9EU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 18 |
UPD65882GB-XXX-8ES |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 19 |
UPD65882GB-XXX-YEU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 20 |
UPD65882GC-XXX-8EU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 21 |
UPD65882GK-XXX-9ET |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| 22 |
UPD65882GK-XXX-9EU |
0.5um Process Channel-less CMOS Gate Array |
NEC |
| | | |
