| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5886A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 91V |
Motorola |
| 2 |
2N5884 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5886 |
Silicon Transistor Corporation |
| 3 |
2N5886 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 4 |
2N5886 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 5 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
| 6 |
2N5886 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
| 7 |
2N5886 |
25A complementary silicon high-power NPN transistor 200W |
Motorola |
| 8 |
2N5886 |
Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 9 |
2N5886 |
Power 25A 80V Discrete NPN |
ON Semiconductor |
| 10 |
2N5886 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 11 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 12 |
2N5886 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5884 |
Silicon Transistor Corporation |
| 13 |
2N5886 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTOR |
ST Microelectronics |
| 14 |
2N5886G |
Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
| 15 |
2SC5886 |
Transistor Silicon NPN Epitaxial Type High-Speed Swtching Applications DC-DC Converter Applications |
TOSHIBA |
| 16 |
2SC5886A |
Power transistor for high-speed switching applications |
TOSHIBA |
| 17 |
MAX5886 |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 18 |
MAX5886EGK |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 19 |
MAX5886EGK+ |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 20 |
MAX5886EGK+D |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 21 |
MAX5886EGK+TD |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 22 |
MAX5886EGK-D |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 23 |
MAX5886EGK-TD |
3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs |
MAXIM - Dallas Semiconductor |
| 24 |
MAX5886EVKIT |
Evaluation Kit for the MAX5886, MAX5887, and MAX5888 |
MAXIM - Dallas Semiconductor |
| 25 |
MAX5886EVKIT |
Evaluation Kit for the MAX5886, MAX5887, and MAX5888 |
MAXIM - Dallas Semiconductor |
| 26 |
MAX5887EVKIT |
Evaluation Kit for the MAX5886, MAX5887, and MAX5888 |
MAXIM - Dallas Semiconductor |
| 27 |
MAX5888EVKIT |
Evaluation Kit for the MAX5886/MAX5887/MAX5888 |
MAXIM - Dallas Semiconductor |
| 28 |
MM5886 |
Direct drive LED watch |
National Semiconductor |
| 29 |
NTE5886 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. |
NTE Electronics |
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