| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADS58C20 |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE+GSM 80-HTQFP -40 to 85 |
Texas Instruments |
| 2 |
ADS58C20IPFP |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE+GSM 80-HTQFP -40 to 85 |
Texas Instruments |
| 3 |
ADS58C20IPFPR |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE+GSM 80-HTQFP -40 to 85 |
Texas Instruments |
| 4 |
ADS58C23 |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE |
Texas Instruments |
| 5 |
ADS58C23IPFP |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE 80-HTQFP -40 to 85 |
Texas Instruments |
| 6 |
ADS58C23IPFPR |
Dual Channel IF BTS Receiver with Signal Processing for multi-mode 3G+LTE 80-HTQFP -40 to 85 |
Texas Instruments |
| 7 |
ADS58C28 |
Dual 11-Bit 200MSPS ADC with SNRBoost |
Texas Instruments |
| 8 |
ADS58C28IRGCR |
Dual 11-Bit 200MSPS ADC with SNRBoost 64-VQFN -40 to 85 |
Texas Instruments |
| 9 |
ADS58C28IRGCT |
Dual 11-Bit 200MSPS ADC with SNRBoost 64-VQFN -40 to 85 |
Texas Instruments |
| 10 |
BZV58C20 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 11 |
BZV58C200 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 12 |
BZV58C200 |
200 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 13 |
BZV58C22 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 14 |
BZV58C24 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 15 |
BZV58C27 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 16 |
HN58C256A |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 17 |
HN58C256A |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 18 |
HN58C256AFP |
Parallel EEPROMs |
Hitachi Semiconductor |
| 19 |
HN58C256AFP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 20 |
HN58C256AFP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 21 |
HN58C256AFP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 22 |
HN58C256AFP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 23 |
HN58C256AFP-85 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 24 |
HN58C256AFP-85 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 25 |
HN58C256AFP-85 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 26 |
HN58C256AFP-85E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 27 |
HN58C256AP |
Parallel EEPROMs |
Hitachi Semiconductor |
| 28 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 29 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 30 |
HN58C256AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| | | |
