No. |
Part Name |
Description |
Manufacturer |
1 |
HN58V1001 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
2 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
3 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
4 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
5 |
HN58V1001P-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
6 |
HN58V1001T |
Parallel EEPROMs |
Hitachi Semiconductor |
7 |
HN58V1001T-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
8 |
HN58V1001T-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
9 |
HN58V1001T-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
10 |
MT58V1MV18D |
16Mb SYNCBURST�� SRAM |
Micron Technology |
11 |
NJU6358V18 |
SERIAL I/O REAL TIME CLOCK WITH WAKE UP OUTPUT |
New Japan Radio |
12 |
NJU6358V19 |
SERIAL I/O REAL TIME CLOCK WITH WAKE UP OUTPUT |
New Japan Radio |
13 |
TC58V1001F-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
14 |
TC58V1001F-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
15 |
TC58V1001FT-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
16 |
TC58V1001FT-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
17 |
TC58V1001SR-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
18 |
TC58V1001SR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
19 |
TC58V1001ST-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
20 |
TC58V1001ST-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
21 |
TC58V1001TR-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
22 |
TC58V1001TR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
23 |
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia) |
TOSHIBA |
24 |
TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM |
TOSHIBA |
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