| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC5966 |
Horizontal Deflection Switching Transistors |
SANYO |
| 2 |
NTE5966 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 3 |
PE-65966 |
E3/DS3/STS-1 LINE INTERFACE UNIT |
Exar |
| 4 |
UPD65966 |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 5 |
UPD65966GD-XXX-LML |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 6 |
UPD65966GL-XXX-NMU |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 7 |
UPD65966GM-XXX-JED |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 8 |
UPD65966GM-XXX-RED |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 9 |
UPD65966GN-XXX-LMU |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 10 |
UPD65966N7-XXX-F6 |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 11 |
UPD65966N7-XXX-H6 |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 12 |
UPD65966S1-XXX-C2 |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| 13 |
UPD65966S1-XXX-F6 |
Channelless type CMOS gate array using 0.35um process(4-layer product) |
NEC |
| | | |
