| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74LS195ADC |
21 mA; universal 4-bit shift register |
National Semiconductor |
| 2 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
| 3 |
93L425ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
| 4 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 5 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 6 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
| 7 |
IDT74LVC125ADC |
3.3V CMOS Quadruple Bus Buffer GATE with 3-State Outputs and 5.0V Tolerant I/O |
IDT |
| 8 |
IDT74LVC125ADC |
3.3V CMOS Quadruple Bus Buffer GATE with 3-State Outputs and 5.0V Tolerant I/O |
IDT |
| 9 |
IDT74LVC125ADC8 |
3.3V CMOS Quadruple Bus Buffer GATE with 3-State Outputs and 5.0V Tolerant I/O |
IDT |
| 10 |
IDT74LVC125ADC8 |
3.3V CMOS Quadruple Bus Buffer GATE with 3-State Outputs and 5.0V Tolerant I/O |
IDT |
| 11 |
MDA960-1 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 50V |
Motorola |
| 12 |
MDA960-2 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 100V |
Motorola |
| 13 |
MDA960-3 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 200V |
Motorola |
| 14 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 15 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 16 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 17 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 18 |
TIP2955 |
PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. |
USHA India LTD |
| 19 |
TIP3055 |
NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. |
USHA India LTD |
| 20 |
UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD |
USHA India LTD |
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